Semiconductor Material Failure Point Localization Analysis Services

Semiconductor Material Failure Point Localization Analysis (SMFPLA) is a sophisticated interdisciplinary field within semiconductor failure analysis (FA) that focuses on the precise identification of both the spatial coordinates and the physical/chemical characteristics of defects in semiconductor materials and devices—defects that directly induce performance degradation, functional anomalies, or even catastrophic failure. As a critical bridge connecting macroscopic failure phenomena (such as abnormal current leakage, unexpected voltage drops, or complete functional shutdown) to their microscopic root causes (including nanoscale oxide breakdown, voids in metal interconnects, or interface delamination), SMFPLA provides indispensable data and insights for semiconductor process optimization, design iteration, and long-term reliability enhancement. Unlike general failure analysis approaches, SMFPLA places strong emphasis on the spatial specificity of defects, requiring the seamless integration of electrical characterization, advanced optical/thermal sensing, high-resolution acoustic imaging, and nanoscale material processing technologies. This integration enables localization accuracy ranging from micrometers down to nanometers, a capability that has become essential as semiconductor process nodes advance to 3nm and below, and device structures evolve into complex 3D architectures like stacked die and chiplets. The core objective of SMFPLA is not only to pinpoint the exact location where the failure occurs but also to establish a clear correlation between the defect's spatial distribution and its subsequent electrical/mechanical effects, thereby enabling targeted interventions that effectively improve production yield and extend product lifespan.

Our Services

CD BioSustainable offers comprehensive SMFPLA services tailored to the entire semiconductor value chain, spanning from wafer-level R&D and chip design validation to mass production yield improvement and post-market reliability troubleshooting. Our services are built on a multi-tiered technical platform that integrates advanced non-destructive and destructive analysis techniques, enabling precise localization of defects in diverse semiconductor materials (e.g., silicon, gallium nitride, silicon carbide) and device structures (e.g., planar MOSFETs, FinFETs, 3D NAND, power modules). Whether addressing ESD/EOS-induced damage in consumer electronics chips, thermal fatigue defects in automotive power semiconductors, or interconnect voids in high-performance computing (HPC) chiplets, our services deliver actionable defect localization data and root cause insights to support rapid process optimization and product iteration. CD BioSustainable's SMFPLA services are distinguished by strict adherence to industry standards and a customer-centric approach that customizes analysis workflows to meet specific application scenarios and technical requirements.

Types of Our Services

Wafer-Level Failure Point Localization Service

This service targets defects occurring during wafer fabrication, including substrate cracks, epitaxial layer defects, gate oxide breakdown, and metal interconnect voids. Key applications include yield improvement for new process nodes, root cause analysis of wafer-level test failures, and material quality validation for epitaxial wafers. We employ a combination of non-destructive techniques (e.g., EMMI, OBIRCH, and micro-Raman spectroscopy) for large-area rapid screening and destructive techniques (e.g., FIB-SEM cross-sectioning and energy-dispersive X-ray spectroscopy (EDS)) for precise defect characterization. For example, in a 7nm logic wafer yield improvement project, our team localized a batch of leakage failures to 20nm-scale voids in the second metal layer using OBIRCH, and subsequent FIB-EDS analysis confirmed that the voids were caused by insufficient sputtering power during metal deposition—enabling the client to optimize process parameters and improve yield by 18%.

Package-Level Failure Point Localization Service

Focused on defects in semiconductor packaging, this service addresses issues such as solder joint cracks, die attach voids, lead frame corrosion, TSV defects, and package delamination. It is critical for automotive, aerospace, and industrial semiconductors where packaging reliability directly impacts product safety. We utilize 3D X-ray tomography for non-destructive 3D reconstruction of package interiors, SAM for interface defect detection, and Thermal EMMI for localization of package-induced electrical shorts. In a case involving automotive power module failures, our team used 3D X-ray tomography to localize micro-cracks in solder joints, and FIB cross-sectioning combined with EBSD (Electron Backscatter Diffraction) analysis revealed that the cracks originated from grain boundary corrosion caused by chlorine residue from insufficient post-soldering cleaning. Based on this insight, the client improved the cleaning process, extending the module's thermal cycle life from 1,500 to 5,000 hours.

Reliability-Driven Failure Point Localization Service

Designed for failure analysis under accelerated stress conditions, this service simulates real-world operating environments (e.g., high temperature, high humidity, voltage stress, and thermal cycling) to localize defects induced by long-term reliability degradation. Key applications include qualification testing for automotive and aerospace chips, lifetime prediction for power semiconductors, and root cause analysis of field failures. Our service combines stress testing equipment with high-sensitivity localization techniques: for example, lock-in thermography (LIT) is used to detect thermal hotspots induced by voltage stress, while FIB-TEM is employed to characterize nanoscale defects such as electromigration-induced metal grain growth and oxide breakdown channels. In a reliability analysis project for a 5G base station power amplifier chip, we localized a thermal fatigue failure to a 30nm-thick interlayer dielectric crack using Thermal EMMI and FIB, and subsequent SIMS (Secondary Ion Mass Spectrometry) analysis identified sodium ion migration as the root cause—guiding the client to adopt a high-purity dielectric material and improve packaging hermeticity.

Our Technologies

• Optical Fault Isolation (OFI) Technologies
  OFI enables non-destructive defect localization for semiconductor failure analysis. EMMI captures weak light emission (900–1700 nm) to identify breakdown, leakage, and ESD/EOS events. OBIRCH detects non-luminescent defects via laser-induced resistance changes. Combined PEM systems integrate EMMI and OBIRCH for comprehensive front- and back-end fault analysis.
• Thermal Fault Isolation Technologies
  Thermal methods locate defects by abnormal heat generation. Thermal EMMI achieves <0.001℃ resolution for micro-leakage and 3D package buried defects. Lock-in thermography (LIT) suppresses noise to precisely localize weak hotspots, which are then verified with high-resolution tools.
• Acoustic and X-Ray Imaging Technologies
  SAM uses 10–1000 MHz ultrasound to non-destructively detect delamination, voids, and die‑attach issues. 2D and 3D X-ray tomography visualizes internal structures with sub-micron precision, locating TSV voids, solder cracks, and die misalignment.
• Nanoscale Destructive Localization Technologies
  FIB provides 5 nm-precision milling, deposition, and cross-sectioning for targeted defect exposure. It prepares TEM samples and supports EDS elemental analysis. TEM/STEM/HRTEM delivers atomic‑resolution imaging to identify dislocations, oxide defects, and lattice faults.

If you are interested in our services and products, please contact us for more information.

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