Isonanotubes-S 99.9% pure semiconducting SWNT thick film

Single-Wall Carbon Nanotubes (SWNTs) are nanoscale cylindrical structures formed by rolling a single graphene sheet into a tube. They exhibit exceptional physical and chemical properties, such as low density, high mechanical strength, excellent thermal stability, and tunable electrical conductivity—characteristics that make them a cornerstone material in advanced nanotechnology and materials science. SWNTs can be classified into two main types based on their electronic properties: metallic SWNTs (which conduct electricity like metals) and semiconducting SWNTs (which exhibit semiconductor behavior, enabling their use in electronic devices like transistors).
Isonanotubes-S 99.9% Pure Semiconducting SWNT Thick Film is a specialized form of SWNT-based material developed for high-performance electronic and optoelectronic applications. Its core feature—99.9% semiconductor purity—addresses a critical challenge in SWNT-based device development: the presence of metallic SWNTs in conventional SWNT samples creates unwanted electrical pathways, increases contact resistance, and degrades the performance of semiconductor-dependent devices (e.g., thin-film transistors, photodetectors). By achieving 99.9% semiconductor purity, this thick film eliminates the interference of metallic SWNTs, ensuring reliable and consistent performance in precision electronic components.
This thick film is distinct from thin SWNT films (typically used in transparent electrodes) due to its greater thickness, which enhances charge carrier density and mechanical robustness. It is manufactured using advanced purification and assembly techniques (aligned with industry practices for high-purity SWNT materials, such as polymer dispersion, centrifugation, or chemical vapor deposition-derived sorting) to preserve the intrinsic properties of semiconducting SWNTs while forming a macroscopic, easy-to-handle thick film structure.

• Packaging: 1 mg
D: 1.2 nm-1.7 nm

Unique light absorption and luminescence properties
Semiconductor characteristics
High charge-carrier mobility

OD: 1.2-1.7 nm
Length: 300 nm-5 μm
Metal catlyst impurity: <1%
Amorphous carbon impurity:  1-5%

This product can be used to manufacture chemical sensors, biosensors, etc., using its electrical properties to detect the conductivity changes caused by the adsorption of target molecules or biological molecules.

Ultra-High Semiconductor Purity (99.9%): The film contains minimal metallic SWNT impurities (≤0.1%), avoiding unwanted electrical leakage and reducing contact resistance between nanotubes—critical for maintaining the performance stability of semiconductor-based devices.
Thick Film Structure: Unlike thin SWNT films (focused on transparency), the thick film design boosts charge carrier density and mechanical durability, making it suitable for applications requiring robust current transmission and resistance to physical stress.
Preserved Intrinsic SWNT Properties: The manufacturing process retains the exceptional electronic properties of semiconducting SWNTs, including high electron and hole mobility—key for enabling fast charge transfer in devices like field-effect transistors (FETs).
Flexible and Processable: As a SWNT-based film, it maintains inherent flexibility, allowing integration into flexible electronic devices (e.g., foldable displays, wearable sensors) without losing performance when bent, folded, or twisted.
Low Amorphous Carbon Impurities: The film is produced using purification methods that minimize amorphous carbon (a common byproduct of SWNT synthesis), ensuring a clean structure that does not interfere with electrical or optical performance.

Thin-Film Transistors (TFTs): The 99.9% semiconducting purity and high charge carrier mobility make the film an ideal channel material for TFTs—key components in flexible displays, smart labels, and low-power integrated circuits. It enables TFTs with low subthreshold swing (a measure of switching efficiency) and high saturation current, outperforming traditional silicon-based TFTs in flexible device scenarios.
Optoelectronic Devices: Semiconducting SWNTs exhibit near-infrared (NIR) light absorption and emission properties. The thick film can be used in NIR photodetectors (for biomedical imaging, night vision, or optical communication) and NIR light-emitting diodes (LEDs), as its high purity reduces non-radiative recombination of excitons (enhancing light detection or emission efficiency).
Flexible Electronic Components: Its flexibility and mechanical robustness allow integration into wearable electronics (e.g., biosensors for health monitoring) and foldable devices (e.g., flexible touchscreens). Unlike brittle materials like indium tin oxide (ITO), it maintains electrical performance after repeated bending.
High-Power Electronic Interconnects: The thick film’s high charge carrier density and low resistance make it suitable for low-loss interconnects in high-power microelectronics (e.g., power management chips), where it can replace traditional metal interconnects (e.g., copper) to reduce heat generation and improve energy efficiency.
Photovoltaic (PV) Device Components: As a semiconducting layer in organic or hybrid PV cells, the film can enhance light absorption (especially in the NIR spectrum) and facilitate charge separation, contributing to higher PV cell efficiency compared to conventional organic semiconductors.

In the current market and research landscape, customers interested in Isonanotubes-S 99.9% Pure Semiconducting SWNT Thick Film may also be concerned with other high-purity semiconducting SWNT-based materials, including 99.99995% ultra-pure semiconducting SWNT array films (used in ultra-large-scale carbon nanotube integrated circuits), semiconducting SWNT thin films (focused on transparent conductive applications like flexible OLED anodes), CuI@SWCNT composite thick films (semiconducting SWNT films filled with CuI to enhance current-carrying capacity, for high-power devices), polymer-wrapped semiconducting SWNT dispersions (used for custom film fabrication via spin-coating or aerosol jet printing), and semiconducting SWNT random network thin-film transistors (pre-assembled device-ready components for rapid prototyping). If you are interested in related products, you can contact us directly or request product customization services.